Ferroelectric polymer memory with a thick interface layer

ABSTRACT

According to one aspect of the invention, a memory array and a method of constructing a memory array are provided. An insulating layer is formed on a semiconductor substrate. A first metal stack is then formed on the insulating layer. The first metal stack is etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. The polymeric layer has a surface with a plurality of roughness formations. A second metal stack is formed on the polymeric layer with an interface layer, which is thicker than the heights of the roughness formations. Then the second metal stack is etched to form second metal lines. Memory cells are formed wherever a second metal line extends over a first metal line.

BACKGROUND OF THE INVENTION

1). Field of the Invention

This invention relates to an electronic assembly and a method ofconstructing an electronic assembly.

2). Discussion of Related Art

Ferroelectric polymer memory chips, like other integrated circuits, areformed on semiconductor wafers. An insulating layer is typically formedon the wafer first. A lower set of electrodes is formed on theinsulating layer over which a polymeric layer is then deposited.

After the polymer is cured and/or annealed, a series of topographicformations, or a “roughness,” manifests on the surface of the polymericlayer. These formations can be on the order of the thickness of thesubstrate and can include valleys, which extend to the lower electrodesand/or insulating layer below.

An upper set of electrodes is then formed on the polymeric layer. Theconductive materials, typically metals, used in the upper electrodes arehighly reactive with the polymer. If these materials make contact, achemical reaction may begin which leads to the failure of the device.Typically, an interface layer is formed between the upper electrodes andthe polymeric layer to prevent such contact from taking place. However,such interface layers are typically only approximately 50 angstromsthick, and due to the severity of the topography of the polymeric layer,the interface layer is often not thick enough to protect the polymerfrom reacting with the metals of the upper electrodes.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention is described by way of example with reference to theaccompanying drawings, wherein:

FIG. 1 is a perspective view of a memory array including a substrate, aninsulating layer, lower metal lines, a polymer layer, and upper metallines;

FIG. 2 is a perspective view of the substrate;

FIG. 3 is a perspective view of the substrate with the insulating layerformed thereon;

FIG. 4 a is a perspective view of the substrate with a first metal stackformed on the insulating layer;

FIG. 4 b is a cross-sectional side view of a portion of the first metalstack;

FIG. 5 is a perspective view of the substrate after the first metalstack has been etched leaving behind the lower metal lines;

FIG. 6 a is a perspective view of the substrate after the polymer layerhas been formed over the insulating layer and the lower metal lines;

FIG. 6 b is a side view of an upper surface of the polymer layer onDetail A in FIG. 6 a;

FIG. 7 a is a perspective view of the substrate with an upper metalstack formed on the polymer layer;

FIG. 7 b is a cross-sectional side view of a portion of the upper metalstack;

FIG. 8 is a perspective view of the substrate after the upper metalstack has been etched leaving behind the upper metal lines;

FIG. 9 is a cross-sectional side view on 9-9 in FIG. 8 of the memoryarray including two memory cells; and

FIG. 10 is a cross-sectional side view of one of the memory cells.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 1 to FIG. 8 illustrate a memory array and a method of constructinga memory array. An insulating layer is formed on a semiconductorsubstrate. A first metal stack is then formed on the insulating layer.The first metal stack is etched to form first metal lines. A polymericlayer is formed over the first metal lines and the insulating layer. Thepolymeric layer has a surface with a plurality of roughness formations.A second metal stack is formed on the polymeric layer with an interfacelayer, which is thicker than the heights of the roughness formations.Then the second metal stack is etched to form second metal lines. Memorycells are formed wherever a second metal line extends over a first metalline. Because of the thickness of the interface layer, the polymericlayer is completely separated from rest of the second metal stack.

FIG. 1 illustrates a ferroelectric polymer memory array 20. The memoryarray 20 may include a substrate 22, an insulating layer 24, lower metallines 26, a polymer layer 28, and upper metal lines 30.

FIGS. 2-8 illustrate a process of making the memory array 20.

FIG. 2 illustrates the substrate 22. The substrate 22 may be made ofsemiconductor material such as silicon and have a thickness 32 of, forexample, approximately 1000 microns. Although as shown the substrate 22appears to be rectangular, it should be understood that the substrate 22may be only a portion of a circular silicon wafer, which typically has adiameter of 200 or 300 millimeters. Although not illustrated, the wafer32 may have a multitude of CMOS circuitry, or other such microelectroniccomponents, formed therein.

It should be noted that FIG. 1 to FIG. 8 are merely illustrative and arenot drawn to scale.

Next, as illustrated in FIG. 3, the insulating, or thermal, layer 24 maybe formed on the substrate 22. The insulating layer 24 may be made of aninsulating, or dielectric material, such as silicon oxide or otherthermal oxide, and may have a thickness 34 of, for example, between 500and 5000 angstroms. The insulating layer 24 may be formed by adeposition process such as chemical vapor deposition (CVD) or thermalgrowth in a diffusion furnace.

As illustrated in FIGS. 4 a and 4 b, a lower metal stack 36 may then beformed on the insulating layer 24. The lower metal stack 36 may have athickness 38 of between 500 and 1000 angstroms, and as shown in FIG. 4b, may include an aluminum layer 40, a titanium layer 42, and a titaniumnitride layer 44. The aluminum layer 40 may be sputtered onto theinsulating layer 24 and may have a thickness 46, for example, of between200 and 600 angstroms. The titanium layer 42 may then be sputtered ontothe aluminum layer 40 and may have a thickness 48 of, for example,between 100 and 140 angstroms. Next, titanium nitride layer 44 may besputtered onto the titanium layer 42 and may have a thickness 50 of, forexample, between 50 and 100 angstroms.

The lower metal stack 36 may then undergo a conventionalphotolithography, such as masking a layer of photoresist on an uppersurface thereof and exposing the layer, and etch process, leaving behindthe lower metal lines 26 as illustrated in FIG. 5. The lower metal lines26 may have a width 52 of, for example, between 0.15 and 1 micron andextend in a first direction 54. The lower metal lines 26 may lie on acentral portion of the thermal layer 24 and may be separated by adistance 56 of, for example, between 0.15 and 1 micron.

As illustrated in FIG. 6, the polymeric layer 28 may then be depositedon the thermal layer 24 and over the lower metal lines 26. The polymericlayer 28 may be made of a copolymer, such as Vinyledene Fluoride (VDF)and Trifluoroethylene (TFE) and have a maximum thickness 58, forexample, over the thermal layer 24 of between 600 and 5000 angstroms.The polymer may be mixed with a solvent in which the polymer isconsiderably soluble, such as diethylcarbonate, and deposited onto thewafer via spin casting. As the wafer spins, excess material may beremoved to leave the thickness 58 of the polymeric layer 28substantially uniform. Further heating of the wafer will evaporate theremaining solvent and leave behind cured and crystallized polymer.

FIG. 6 b illustrates Detail A in FIG. 6 a and shows an upper surface ofthe polymeric layer 28. The upper surface of the polymeric layer 28 maynot completely smooth but may be covered with a series of topographic,or roughness, formations 60. The formations 60 are a series of raisedand recessed areas and may have features with heights 62 typically ofabout 150 angstroms. However, the heights 62 can reach up to 600angstroms. Although not illustrated, the formations 60 in the polymericlayer 28 may be gaps, which extend to the thermal layer 24 or the lowermetal lines 26 below.

Next, as illustrated in FIG. 7 a, an upper metal stack 64 may be formedon the polymeric layer 28. The upper metal stack 64 may have a thickness66 of, for example, between 600 and 1000 angstroms, and as illustratedin FIG. 7 b, may include, in a preferred embodiment, a titanium oxidelayer 68, a titanium layer 70, and an aluminum layer 72. The titaniumoxide layer 68, or interface layer, may be formed directly on thepolymeric layer 28 by a deposition process, such as atomic layerdeposition (ALD), to a thickness 74 of at least 150 angstroms. Then thetitanium layer 70 may be formed on the titanium oxide layer 68 by ALD toa thickness 76 of between 30 and 70 angstroms, and the aluminum layer 72is then formed on the titanium layer 70 by ALD to a thickness 78 ofbetween 200 and 600 angstroms. The titanium oxide layer 68 may be formedsuch that its thickness 74 is greater than the heights 62 of thetopographic formations 60. Because the thickness 74 of the titaniumoxide layer 68 is greater than the heights 62 of the formations 60, theother layers of the upper metal stack 64 are completely separated fromthe polymeric layer 28.

Other methods may be used to form the various layers of the memory array20 such as thermal evaporation, plating, chemical vapor deposition(CVD), and ion beam sputtering. However, because of the heat generated,sputtering does not work well for forming the upper metal stack 64.Furthermore, other materials may be used in the various layers such astantalum nitride and tantalum.

The upper metal stack 64 may then undergo a conventionalphotolithography and etch process leaving behind the upper metal lines30 as illustrated in FIG. 8. The upper metal lines 30 may have a width80 of, for example, between 0.15 and 1 micron and extend in a seconddirection 82, which is perpendicular to the first direction 54. Theupper metal lines 30 may lie on a central portion of the upper surfaceof the polymeric layer 28 and may be separated by a distance 84 of, forexample, between 0.15 and 1 micron. FIG. 8 illustrates the completedferroelectric polymer memory array 20, which contains four memory cells86.

FIG. 9 illustrates two memory cells 86 of the memory array 20. Eachupper metal line 30 may cross over both lower metal lines 26. Eachmemory cell 86 may be formed by sections, or portions, of the upper 30and the lower 26 metal lines, which directly oppose each other with asection of the polymeric layer 28 lying between.

FIG. 10 illustrates one of the memory cells 86. The memory cells 86include a section of a lower metal line 26, a section of the polymericlayer 28 and a section of an upper metal line 30. The sections of thelower metal lines 26 include the aluminum 40, titanium 42, and titaniumnitrate 44 layers that were formed in the lower metal stack 36. Thesections of the upper metal lines 30 include the different layers oftitanium oxide 68, titanium 70, and aluminum 72 that were formed in theupper metal stack 64. Although not shown in detail, the titanium oxidelayer 68 acts as an interface and completely separates the titaniumlayer 70 from the polymeric layer 28.

Although the embodiment shown contains only two layers of metal linesand one layer of polymer, it should be understood that the number oflevels of the memory array may be increased to “stack” memory cells ontop of one another. Although not shown, when the memory arrays on thewafer are complete, the wafer is sawed into individual microelectronicdie, which are packaged on package substrates and eventually attached tocircuit boards. The circuit boards are typically placed in electronicdevices such as computers.

As shown schematically in FIG. 10, the aluminum layer 40 of the lowermetal line 26 may be a lower conductive electrode and connected to afirst electric terminal 88. The aluminum layer 72 of the upper metallines 30 may be an upper conductive electrode and connected to a secondelectric terminal 90.

In use, a first voltage may be applied across the first 88 and second 90electric terminals. The first voltage may cause the dipoles contained inthe polymer to align themselves in a particular orientation. After thefirst voltage is released from the first 88 and second 90 electricterminals, the polymer retains the orientation of the dipoles therein,and thus the polymer located between the lower 26 and upper 30 metallines maintains a charge. A second voltage, of an opposite polarity, maybe applied across the first 88 and second 90 electric terminals toreverse the orientation, and therefore the charge, of the dipoles withinthe polymer. The presence or absence of a particular charge in one ofthe cells 86 may be used to store either a 0 or a 1 of a memory bit.Other electric signals may be sent through the first 88 and second 90electric terminals to detect the charge of the polymer and thus read thememory of the bit of information.

One advantage is that the interface layer, because of its thickness,provides a complete separation between the polymeric layer and theelectrodes. Thus, the polymeric layer and the electrodes do not makecontact and no chemical reaction between the two takes place. Therefore,the reliability and longevity of the memory array are improved. Anotheradvantage is that the charge retention performance of the memory arrayis improved.

While certain exemplary embodiments have been described and shown in theaccompanying drawings, it is to be understood that such embodiments aremerely illustrative and not restrictive of the current invention, andthat this invention is not restricted to the specific constructions andarrangements shown and described since modifications may occur to thoseordinarily skilled in the art.

1. A memory cell comprising: two electrodes; a polymeric body, betweenthe electrodes, having a plurality of roughness formations on a surfacethereof, the roughness formations having a height, the polymeric bodymaintaining a charge after a voltage is applied across the electrodes;and an interface material, between at least one of the electrodes andthe surface of the polymeric body, having a thickness being greater thanthe height of the roughness formations.
 2. The memory cell of claim 1,wherein the polymeric body maintains a second charge after a secondvoltage is applied across the electrodes.
 3. The memory cell of claim 2,wherein the interface material completely separates the at least oneelectrode and the polymeric body.
 4. The memory cell of claim 3, whereinthe thickness of the interface material is at least 150 angstroms. 5.The memory cell of claim 4, wherein the electrodes are metal.
 6. Thememory cell of claim 5, wherein the electrodes are made of at least oneof titanium nitride, titanium, and aluminum.
 7. The memory cell of claim6, wherein the polymeric body is ferroelectric.
 8. The memory cell ofclaim 7, wherein the polymeric body includes fluorine.
 9. The memorycell of claim 8, wherein the height of the roughness formation isbetween 600 and 1000 angstroms.
 10. The memory cell of claim 6, whereinthe interface material is titanium oxide.
 11. A semiconductor devicecomprising; a substrate; a first layer, on the substrate, having aplurality of first conductive lines therein; a second layer, on thefirst layer, having a plurality of polymeric sections, each polymericsection being over at least a portion of at least one of the firstconductive lines, the polymeric sections having a plurality of roughnessformations on a surface thereof, the roughness formations having aheight; a third layer, on the second layer, having a plurality ofinterface sections, each interface section being adjacent to at leastone of the polymeric sections, each interface section having a thicknessgreater than the height of the roughness formations; and a fourth layer,on the third layer, having a plurality of second conductive linestherein, each second conductive line extending over at least one firstconductive line, at least one polymeric section, and at least oneinterface section to form a plurality of memory cells such that avoltage applied across one of the first conductive lines and one of thesecond conductive lines changes a charge of the polymeric section from afirst value to a second value.
 12. The semiconductor device of claim 11,wherein the thickness of each interface section is at least 150angstroms.
 13. The semiconductor device of claim 12, wherein thesubstrate is silicon and has microelectronic circuitry formed therein.14. The semiconductor device of claim 13, further comprising aninsulating layer between the substrate and the first layer.
 15. Thesemiconductor device of claim 14, wherein the insulating layer issilicon oxide.
 16. The semiconductor device of claim 15, wherein thefirst and second conductive lines are made of at least one of titaniumnitride, titanium, and aluminum.
 17. The semiconductor device of claim16, wherein the polymeric sections are ferroelectric.
 18. Thesemiconductor device of claim 17, wherein the height of the roughnessformations is between 600 and 1000 angstroms.
 19. The semiconductordevice of claim 18, wherein the interface sections are made of titaniumoxide.
 20. The semiconductor device of claim 19, wherein said layers arestacked vertically.
 21. A method for constructing a memory cellcomprising: forming a polymeric body on a first electrode, the polymericbody having a plurality of roughness formations on a surface thereof,the roughness formations having a height; depositing an interfacematerial on the surface of the polymeric body, the interface materialhaving a thickness greater than the height of the roughness formations;and forming a second electrode on the interface material to change acharge of the polymeric body from a first value to a second value when avoltage is applied across the first electrode and the second electrode.22. The method of claim 21, wherein the thickness of the interfacematerial is at least 150 angstroms.
 23. The method of claim 22, furthercomprising forming the first electrode on a substrate.
 24. The method ofclaim 23, wherein the polymeric body is ferroelectric.
 25. A method forconstructing a semiconductor device comprising: forming a dielectriclayer on a substrate; forming a plurality of first conductive lines,extending in a first direction, on the dielectric layer; forming aplurality of polymeric sections on the first conductive lines, thepolymeric sections having a plurality of roughness formations on surfacethereof, the roughness formations having a height; forming a pluralityof interface sections on the polymeric sections, the interface sectionshaving a thickness greater than the height of the roughness formations;and forming a plurality of second conductive lines, extending in asecond direction, on the interface sections to position each respectivepair of polymeric and interface sections between one first and secondconductive line, the second direction being transverse to the firstdirection.
 26. The method of claim 25, wherein the thickness of theinterface sections is at least 150 angstroms.
 27. The method of claim26, wherein the interface sections are titanium oxide.
 28. The method ofclaim 27, wherein the conductive lines are made of at least one oftitanium nitride, titanium, and aluminum.
 29. The method of claim 28,wherein the second direction is substantially perpendicular to the firstdirection.
 30. The method of claim 29, wherein said formation ofpolymeric sections comprises spinning a polymeric layer onto thesubstrate and curing the polymeric layer.